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| to ? 92 1. emitter 2. base 3. collector to-92 plastic-encapsulate transistors 2SB1426 transistor (pnp) features z general purpose switching and amplification maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -0.05ma,i e =0 -20 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-0.05ma,i c =0 -6 v collector cut-off current i cbo v cb =-20v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-2v, i c =-0.1a 82 390 collector-emitter saturation voltage v ce(sat) * i c =-2a,i b =-0.1a -0.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 35 pf transition frequency f t v ce =-2v,i c =-0.5a, f=100mhz 240 mhz *pulse test classification of h fe rank p q r range 82-180 120-270 180-390 symbol parameter value unit v cbo collector-base voltage -20 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -6 v i c collector current -3 a p c collector power dissipation 750 mw r ja thermal resistance from junction to ambient 166 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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